composite transistors 1 publication date: june 2004 sjj00291aed NP0G3A0 silicon pnp epitaxial planar type (tr1) silicon npn epitaxial planar type (tr2) for digital circuits features ? sss-mini type 6-pin package reduction of the mounting area and assembly cost by one half ? maximum package height (0.4 mm) contributes to develop thinner equipments basic part number ? unr21a0 + unr22a0 absolute maximum ratings t a = 25 c marking symbol: 6l internal connection unit: mm parameter symbol rating unit tr1 collector-base voltage v cbo ? 50 v (emitter open) collector-emitter voltage v ceo ? 50 v (base open) collector current i c ? 80 ma tr2 collector-base voltage v cbo 50 v (emitter open) collector-emitter voltage v ceo 50 v (base open) collector current i c 80 ma overall total power dissipation * p t 125 mw junction temperature t j 125 c storage temperature t stg ? 55 to + 125 c note) * : measuring on substrate at 17 mm 10 mm 1 mm 1 : base (tr1) 4 : collector (tr2) 2 : base (tr2) 5 : emitter (tr1) 3 : emitter (tr2) 6 : collector (tr1) sssmini6-f1 package 0 to 0.02 654 1 2 3 1.00 0.04 (0.10) 0.10 1.00 0.05 display at no.1 lead 0.80 0.05 0.10 (0.35) (0.35) 0.37 +0.03 - 0.02 0.12 +0.03 - 0.02 47 k ? 47 k ? (b1) 1 (b2) 2 (e2) 3 tr2 tr1 6 (c1) 5 (e1) 4 (c2)
NP0G3A0 2 sjj00291aed electrical characteristics t a = 25 c 3 c ? tr1 ? tr2 parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = 10 a, i e = 050v collector-emitter voltage (base open) v ceo i c = 2 ma, i b = 050v collector-base cutoff current (emitter open) i cbo v cb = 50 v, i e = 0 0.1 a collector-emitter cutoff current (base open) i ceo v ce = 50 v, i b = 0 0.5 a emitter-base cutoff current (collector open) i ebo v eb = 6 v, i c = 0 0.01 ma forward current transfer ratio h fe v ce = 10 v, i c = 5 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 0.3 ma 0.25 v output voltage high-level v oh v cc = 5 v, v b = 0.5 v, r l = 1 k ? 4.9 v output voltage low-level v ol v cc = 5 v, v b = 2.5 v, r l = 1 k ? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? transition frequency f t v cb = 10 v, i e = ? 2 ma, f = 200 mhz 150 mhz p t ? t a parameter symbol conditions min typ max unit collector-base voltage (emitter open) v cbo i c = ? 10 a, i e = 0 ? 50 v collector-emitter voltage (base open) v ceo i c = ? 2 ma, i b = 0 ? 50 v collector-base cutoff current (emitter open) i cbo v cb = ? 50 v, i e = 0 ? 0.1 a collector-emitter cutoff current (base open) i ceo v ce = ? 50 v, i b = 0 ? 0.5 a emitter-base cutoff current (collector open) i ebo v eb = ? 6 v, i c = 0 ? 0.01 ma forward current transfer ratio h fe v ce = ? 10 v, i c = ? 5 ma 160 460 ? collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 0.3 ma ? 0.25 v output voltage high-level v oh v cc = ? 5 v, v b = ? 0.5 v, r l = 1 k ?? 4.9 v output voltage low-level v ol v cc = ? 5 v, v b = ? 2.5 v, r l = 1 k ?? 0.2 v input resistance r 1 ? 30% 47 + 30% k ? transition frequency f t v cb = ? 10 v, i e = 1 ma, f = 200 mhz 80 mhz common characteristics chart 0 80 120 40 0 140 120 40 100 80 20 60 total power dissipation p t ( mw ) ambient temperature t a ( c ) note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors.
NP0G3A0 3 sjj00291aed i c ? v ce v ce(sat) ? i c h fe ? i c i o ? v in v in ? i o characteristics charts of tr1 collector current i c (ma) collector-emitter voltage v ce (v) 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 40 ? 50 ? 60 ? 70 ? 80 ? 30 ? 20 ? 10 t a = 25 c i b = ? 1.0ma ? 0. 9 ma ? 0. 8 ma ? 0. 7 ma ? 0.6 ma ? 0.5 ma ? 0.4 ma ? 0.3 ma ? 0.2 ma ? 0.1 ma collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) ? 1 ? 10 ? 100 ? 0.01 ? 10 ? 1 ? 0.1 t a = 85 c 25 c ? 25 c i c / i b = 10 forward current transfer ratio h fe collector current i c (ma) ? 1 ? 10 ? 100 0 350 200 250 300 150 100 50 t a = 85 c 25 c ? 25 c v ce = ? 10 v input voltage v in (v) output current i o (ma) 0 ? 2.5 ? 1 ? 1.5 ? 2 ? 0.5 ? 0.01 ? 10 ? 1 ? 0.1 v o = ? 5 v t a = 25 c output current i o (ma) input voltage v in (v) ? 0.1 ? 1 ? 10 ? 100 ? 0.1 ? 100 ? 10 ? 1 v o = ? 0.2 v t a = 25 c
NP0G3A0 4 sjj00291aed i c ? v ce v ce(sat) ? i c h fe ? i c i o ? v in v in ? i o characteristics charts of tr2 collector current i c (ma) collector-emitter voltage v ce (v) 012 10 8 26 4 0 10 20 30 40 50 60 70 80 0.6 ma 0. 5 ma t a = 25 c 0. 4 ma 0. 1 ma 0. 2 ma 0. 3 ma i b = 1.0 ma 0. 9 ma 0. 7 ma 0. 8 ma collector-emitter saturation voltage v ce(sat) (v) collector current i c (ma) 0.1 1 10 100 0.01 10 0.1 1 t a = 85 c 25 c ? 25 c i c / i b = 10 forward current transfer ratio h fe collector current i c (ma) 11010 0 500 550 400 450 300 350 200 250 100 150 50 t a = 85 c 25 c ? 25 c v ce = 10 v input voltage v in (v) output current i o (ma) 023456 1 0.1 100 10 1 v o = 5 v t a = 25 c output current i o (ma) input voltage v in (v) 0.1 1 10 100 0.1 10 1 v o = 0.2 v t a = 25 c
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